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Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.056 –––
V/°C
Reference to 25°C, I D = 1mA
?
––– ––– 25 V DS = 55V, V GS = 0V
ns
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– ––– 0.14 V GS = 10V, I D = 6A ?
––– ––– 0.21 V GS = 4.5V, I D = 5A ?
1.0 ––– ––– V V DS = V GS , I D = 250μA
3.1 ––– ––– S V DS = 25V, I D = 6A ?
μA
––– ––– 250 V DS = 55V, V GS = 0V, T J = 150°C
––– ––– 100 V GS = 16V
nA
––– ––– -100 V GS = -16V
––– ––– 7.9 I D = 6A
––– ––– 1.4 nC V DS = 44V
––– ––– 4.4 V GS = 5.0V, See Fig. 6 and 13 ?
––– 6.5 ––– V DD = 28V
––– 47 ––– I D = 6A
––– 12 ––– R G = 6.2 ?, V GS = 5.0V
––– 23 ––– R D = 4.5 ?, See Fig. 10 ?
L D
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
D
L S
Internal Source Inductance
––– 7.5 –––
from package
and center of die contact ?
G
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 265 ––– V GS = 0V
––– 80 ––– pF V DS = 25V
––– 38 ––– ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
––– –––
––– –––
10
40
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
Diode Forward Voltage
––– ––– 1.3 V T J = 25°C, I S = 6A, V GS = 0V
?
t rr
Q rr
t on
Notes:
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– 37 56 nS T J = 25°C, I F = 6A
––– 48 71 nC di/dt = 100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 1.96mH
R G = 25 ? , I AS = 6A. (See Figure 12)
? I SD ≤ 6.0A, di/dt ≤ 210A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
2
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? This is applied for I-PAK, L S of D-PAK is measured between
lead and center of die contact
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